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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 1/4 HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings (TA=25C) TO-126 * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation ....................................................................................................................................... 1 W Total Power Dissipation (TC=25C) .................................................................................................................... 20 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................................................... -180 V BVCEO Collector to Emitter Voltage................................................................................................................... -160 V BVEBO Emitter to Base Voltage............................................................................................................................. -5 V IC Collector Current (DC) .................................................................................................................................. -1.5 A IC Collector Current (Pulse).................................................................................................................................. -3 A Thermal Characteristics RJC Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25 C/W Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 100 30 Typ. 140 27 Max. -10 -1 -1.5 200 MHz pF Unit V V V uA V V IC=-1mA, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-160V, IE=0 IC=-500mA, IB=-50mA IC=-150mA, VCE=-5V IC=-150mA, VCE=-5V IC=-500mA, VCE=-5V IC=-150mA ,VCE=-5V VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions Classification Of hFE1 Rank Range C 100-200 HSB649T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 2/4 Saturation Voltage & Collector Current Saturation Voltage (mV) 125 C o 75 C 1000 o VCE(sat) @ IC=10IB hFE 100 25 C o 75 C 125 C 25 C o o o 100 hFE @ VCE=5V 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 25 C o Capacitance & Reverse-Biased Voltage 100 Saturation Voltage (mV) Capacitance (pF) 75 C o Cob 10 125 C VBE(ON) @ VCE=5V o 100 1 10 100 1000 10000 1 0.1 1 10 100 Collector Current-IC (mA) Reverse Biased Voltage (V) Safe Operating Area 10 PT=1ms PT=100ms Collector Current-IC (A) 1 PT=1s 0.1 0.01 1 10 100 1000 Forward Voltage-VCE (V) HSB649T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126 Dimension D A M B 1 2 3 N K Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 3/4 J Marking: Pb Free Mark H SB 649T Date Code Pb-Free: " . " (Note) Normal: None Control Code C G F H L Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D F G H J K L M N Min. 3.60 6.90 13.00 7.20 0.65 1.00 4.52 1.14 0.90 0.45 2.92 2.00 Max. 4.40 7.60 16.50 8.50 0.88 1.42 4.62 1.50 1.50 0.60 3.40 2.70 Unit: mm 3-Lead TO-126 Plastic Package HSMC Package Code: T Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB649T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HSB649T HSMC Product Specification |
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